inchange y miconductor product specification silicon npn power transistors 2SC4763 description ? with to-3p(h)is package ? high speed ,high speed ? low saturation voltage ? bult-in damper diode applications ? horizontal deflection output for medium resolution display pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 600 v v ebo emitter-base voltage open collector 5 v i c collector current ?8 a i cm collector current-peak ?16 a i b base current 4 a p c collector power dissipation t c =25 ?? 50 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3p(h)is) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC4763 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =300ma ;i c =0 5 v v cesat collector-emitter saturation voltage i c =6a; i b =1.2a 5 v v besat base-emitter saturation voltage i c =6a; i b =1.2a 1.5 v i cbo collector cut-off current v cb =1500v; i e =0 1 ma i ebo emitter cut-off current v eb =5v; i c =0 83 250 ma h fe-1 dc current gain i c =1a ; v ce =5v 8 12 h fe-2 dc current gain i c =6a ; v ce =5v 5 9 c ob collector output capacitance i e =0 ; v cb =10v,f=1mhz 170 pf v f diode forward voltage i f =6a 1.3 1.8 v f t transition frequency i c =0.1a ; v ce =10v 1 3 mhz switching times resistive load t s storage time 1.8 3.0 | s t f fall time i cp =6a;i b1 =1.2a i b2 =-2.4a; r l =33 |? 0.1 0.2 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SC4763 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.20 mm)
inchange semiconductor product specification 4 silicon npn power transistors 2SC4763
|
